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Home > Manufacturers > AMI Semiconductor / ON Semiconductor > NSBC115EPDXV6T1G

NSBC115EPDXV6T1G

AMI Semiconductor / ON Semiconductor

  • NSBC115EPDXV6T1G
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See Product Specifications for product details.
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Dowload NSBC115EPDXV6T1G Datasheet
Part Number NSBC115EPDXV6T1G
Manufacturer AMI Semiconductor / ON Semiconductor
Description SS SOT563 RSTR XSTR TR
Lead Free Status / RoHS Status
In Stock
Reference Price
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Product parameter

Part Number NSBC115EPDXV6T1G
Manufacturer AMI Semiconductor / ON Semiconductor
Product Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Description SS SOT563 RSTR XSTR TR
Lead Free Status / RoHS Status
Quantity Available 955781 pcs
Datasheet NSBC115EPDXV6T1G.pdf
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Supplier Device Package SOT-563
Series Automotive, AEC-Q101
Resistor - Emitter Base (R2) 100 kOhms
Resistor - Base (R1) 100 kOhms
Power - Max 357mW
Package / Case SOT-563, SOT-666
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Frequency - Transition -
Detailed Description Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 357mW Surface Mount SOT-563
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA
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